R8008ANJ Datasheet, Mosfet, ROHM

R8008ANJ Features

  • Mosfet 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed   to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free plating ; RoHS

PDF File Details

Part number:

R8008ANJ

Manufacturer:

ROHM ↗

File Size:

1.71MB

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📄 Datasheet

Description:

Power mosfet.

Datasheet Preview: R8008ANJ 📥 Download PDF (1.71MB)
Page 2 of R8008ANJ Page 3 of R8008ANJ

TAGS

R8008ANJ
Power
MOSFET
ROHM

📁 Related Datasheet

R8008ANJ - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R8008ANJ FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Res.

R8008ANJFRG - Power MOSFET (ROHM)
R8008ANJ FRG   Nch 800V 8A Power MOSFET    Datasheet lOutline VDSS 800V TO-263S   RDS(on)(Max.) 1.03Ω SC-83 ID ±8A LPT(S) PD 195W     .

R8008ANX - Power MOSFET (Rohm)
R8008ANX   Nch 800V 8A Power MOSFET    Datasheet VDSS 800V lOutline   RDS(on)(Max.) 1.03Ω ID ±8A TO-220FM PD 66W          lFeatures 1) .

R8008ANX - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R8008ANX FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Res.

R8001CND - Power MOSFET (ROHM)
R8001CND   Nch 800V 1A Power MOSFET    Datasheet VDSS RDS(on)(Max.) ID PD 800V 8.7Ω ±1A 36W lFeatures 1) Low on-resistance. 2) Fast switching spee.

R8002ANJ - Power MOSFET (ROHM)
R8002ANJ   Nch 800V 2A Power MOSFET VDSS RDS(on)(Max.) ID PD 800V 4.3Ω ±2A 62W lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Parallel.

R8002ANJ - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R8002ANJ FEATURES ·Drain Current –ID= 24A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Re.

R8002ANJFRG - Power MOSFET (ROHM)
R8002ANJ FRG   Nch 800V 2A Power MOSFET    Datasheet VDSS RDS(on)(Max.) ID PD 800V 4.3Ω ±2A 62W lFeatures 1) Low on-resistance. 2) Fast switching .

R8002ANX - Power MOSFET (Rohm)
R8002ANX Nch 800V 2A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD Features 1) Low on-resistance. 800V 4.3 2A 36W Outline TO-220FM Inner c.

R8002ANX - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R8002ANX FEATURES ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Res.

Stock and price

part
ROHM Semiconductor
MOSFET N-CH 800V 8A LPTS
DigiKey
R8008ANJFRGTL
1026 In Stock
Qty : 500 units
Unit Price : $2.35
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