* 1) Cathode common type. 2) Low IR 3) High reliability 1 Anode Cathode Anode for d lConstruction nde s Silicon epitaxial planar 1.2 1.3 0.8 (1) (2) (3) ROHM TO220FN 1 Manufacture Date 0.7±0.1 0.05 2.6±0.5 ommeesign lAbsolute maximum ratings (Tc= 25°C) D Parameter Symbol Limits Unit c
RBQ20T45A Datasheet (454.93 KB)
RBQ20T45A
454.93 KB
Schottky barrier diode.
Schottky Barrier Diode
RBQ20T45A
Datasheet
lApplication
lDimensions (Unit : mm)
lStructure
General rectification
4.5±0.3 0.1
10.0±0.3 0.
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