RCX510N25 Datasheet - Rohm

RCX510N25 SILICON N-CHANNEL MOS FET

PRODUCTS TO-220FM TYPE RCX510N25 PAGE 1/4 1.TYPE RCX510N25 2.STRUCTURE SILICON N-CHANNEL MOS FET 3.APPLICATIONS SWITCHING 4.ABSOLUTE MAXIMUM RATINGS [Ta=25℃] DRAIN-SOURCE VOLTAGE VDSS 250V GATE-SOURCE VOLTAGE VGSS ±30V DRAIN CURRENT CONTINUOUS PULSED ID IDP SOURCE CURRENT (BODY DIODE) CONTINUOUS PULSED IS ISP ±51A ±204A PW≦10μs DUTY CYCLE≦1% 51A 204A PW≦10μs DUTY CYCLE≦1% TOTAL POWER DISSIPATION PD 40W (Tc=25℃) CHANNEL TEMPERATURE Tch 150℃ RAN.

RCX510N25 Datasheet (130.75 KB)