1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel us
✔ RUM003N02 Application
Switching
zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this d
RUM001L02, Rohm
RUM001L02
Nch 20V 100mA Small Signal MOSFET
VDSS RDS(on)(Max.)
ID PD
20V 3.5Ω ±100mA 150mW
lFeatures
1) Low voltage drive(1.2V) makes this device.
RU1, Sanken electric
Fast-Recovery Rectifier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewave Single Shot
Electri.
RU120N15Q, Ruichips
RU120N15Q
N-Channel Advanced Power MOSFET
Features
· 150V/120A
RDS (ON)=15mΩ(Typ.) @ VGS=10V
·Avalanche Rated · Reliable and Rugged · Lead Free and G.
