RUM001L02 - Nch 20V 100mA Small Signal MOSFET
(Rohm)
RUM001L02
Nch 20V 100mA Small Signal MOSFET
VDSS RDS(on)(Max.)
ID PD
20V 3.5Ω ±100mA 150mW
lFeatures
1) Low voltage drive(1.2V) makes this device.
RUM002N02 - 1.2V Drive Nch MOSFET
(Rohm)
1.2V Drive Nch MOSFET
RUM002N02
zStructure Silicon N-channel MOSFET zDimensions (Unit : mm)
VMT3
zApplications Switching
zFeatures 1) Fast switching.
RUM002N05 - 1.2V Drive Nch MOSFET
(Rohm)
1.2V Drive Nch MOSFET
RUM002N05
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
VMT3
Features 1) High speed switing. 2) Small package(.
RUM003N02 - 2.5V Drive Nch MOSFET
(Rohm)
RUM003N02
Transistor
2.5V Drive Nch MOSFET
RUM003N02
zStructure Silicon N-channel MOSFET zDimensions (Unit : mm)
VMT3
zApplications Switching
zFeat.
RU1 - Fast-Recovery Rectifier Diodes
(Sanken electric)
Fast-Recovery Rectifier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewave Single Shot
Electri.
RU1 - FAST RECOVERY RECTIFIER DIODES
(EIC)
.eicsemi.
RU1 - RU1B
PRV : 400 - 800 Volts Io : 0.25 Ampere
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
FAST RECOVERY RECTIFIER DIODES
D.
RU1088R - N-Channel Advanced Power MOSFET
(Ruichips)
RU1088R
N-Channel Advanced Power MOSFET
Features
• 100V/80A RDS (ON)=10mΩ(Typ.) @ VGS=10V
• Ultra Low On-Resistance
• Exceptional dv/dt capability
• .
RU120N15Q - N-Channel Advanced Power MOSFET
(Ruichips)
RU120N15Q
N-Channel Advanced Power MOSFET
Features
· 150V/120A
RDS (ON)=15mΩ(Typ.) @ VGS=10V
·Avalanche Rated · Reliable and Rugged · Lead Free and G.
RU120N15R - N-Channel Advanced Power MOSFET
(Ruichips)
RU120N15R
N-Channel Advanced Power MOSFET
Features
· 150V/120A
RDS (ON)=15mΩ(Typ.) @ VGS=10V
·Avalanche Rated · Reliable and Rugged · Lead Free and G.
RU12200R - N-Channel Advanced Power MOSFET
(Ruichips)
RU12200R
N-Channel Advanced Power MOSFET
Features
• 120V/200A, RDS (ON) =5.8mΩ(Typ.)@VGS=10V
• Reliable and Rugged • Ultra Low On-Resistance • 100% a.