* 1) Tr : Low VCE(sat) Di : Low VF 2) Small package 1.0 0.5 0.5 (5) (4) 1.6 1.2 (1) (2) (3) 0.22 0.13 zStructure NPN Silicon epitaxial planar transistor Schottky barrier diode Each lead has same dimensions Abbreviated symbol : L12 ROHM : EMT5 The following characteristics apply to both Di1 and
UML12N
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General purpose transistor.
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EML12 / UML12N
Transistors
General purpose transistor (isolated transistor and diode)
EML12 / UML12N
2SC4617and RB521S-30 are ho.
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