QL65D6SA Datasheet - Roithner Lasertechnik

QL65D6SA InGaAlP Laser Diode

www.DataSheet4U.com QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65D6SA Signature of Approval Approvaed by Checked by Issued by Approval by Customer 315-9, Chunheung-ri, Sungger-eup, Chunan-city, Chungnam, Korea 330-836 WWW.QSILaser.com www.DataSheet4U.com QL65D6SA InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd. 2003. Rev 0 OVERVIEW QL65D6SA is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive li.

QL65D6SA Features

* - Visible Light Output - Optical Power Output - Package Type : : : λp = 650 nm 5mW CW TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode

* ELECTRICAL CONNECTION Bottom View Pin Configuration www.DataSheet4U.com

* ABSOLUTE MAXIMUM RATING at Tc=25°C Items Optical Outp

QL65D6SA_ETC.pdf