QL65D5S-B-L1 - LASER DIODE
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer :.
Model : QL65D5S-A/B/C-L1 Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65D5S-A/B/C-L1 InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd.
Ver.1 May.
2008 OVERVIEW QL65D5S-A/B/C-L1 is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure.
It's an attractive light source, with a
QL65D5S-B-L1 Features
* - Visible Light Output : λp = 650 nm - Optical Power Output : 5mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode
* ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode
