Datasheet4U Logo Datasheet4U.com

AS081C200W High Power Stacked Infrared Laser Diode Array

AS081C200W Description

AS081C200W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array .

AS081C200W Applications

* Output Power: 200 W
* Laser Pumping
* 780-830 nm Emission Wavelength
* Medical Usage
* Spectral Width: ≤4 nm
* High power laser diode applications
* High Reliability, High Efficiency
* CW stack arrays adopt micro-channel packa

📥 Download Datasheet

Preview of AS081C200W PDF
datasheet Preview Page 2

Datasheet Details

Part number
AS081C200W
Manufacturer
Roithner
File Size
112.41 KB
Datasheet
AS081C200W-Roithner.pdf
Description
High Power Stacked Infrared Laser Diode Array

📁 Related Datasheet

  • AS083-LS2 - Human pyroelectric infrared sensor controller (ASCHIP)
  • AS004M1-08 - GaAs MMIC SPST FET Switch (Alpha Industries)
  • AS004M1-11 - GaAs MMIC SPST FET Switch (Alpha Industries)
  • AS004M2-08 - GaAs MMIC SPST FET Switch (Alpha Industries)
  • AS004M2-11 - GaAs MMIC SPST FET Switch (Alpha Industries)
  • AS004S2-11 - GaAs IC SPDT Switch (Alpha Industries)
  • AS006L1-00 - GaAs MMIC SPST FET (Alpha Industries)
  • AS006L1-01 - GaAs IC SPST Switch (Alpha Industries)

📌 All Tags

High Power Stacked Infrared Laser Diode Array Roithner
Roithner AS081C200W-like datasheet