Datasheet4U Logo Datasheet4U.com

AS081Q1200W High Power Stacked Infrared Laser Diode Array

AS081Q1200W Description

AS081Q1200W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array .

AS081Q1200W Features

* Output Power: 1200 W qCW
* 780-830 nm Emission Wavelength
* Spectral Width: ≤4 nm
* High Reliability, High Efficiency

AS081Q1200W Applications

* Laser Pumping
* Medical Usage
* High power laser diode applications Specifications (25°C) Item Optical Specifications qCW Output Power qCW Output Power / Bar Array Length Center Wavelength Wavelength Tolerance Spectral Width Package Style Bar Length Number of Bars Waveleng

📥 Download Datasheet

Preview of AS081Q1200W PDF
datasheet Preview Page 2

Datasheet Details

Part number
AS081Q1200W
Manufacturer
Roithner
File Size
112.89 KB
Datasheet
AS081Q1200W-Roithner.pdf
Description
High Power Stacked Infrared Laser Diode Array

📁 Related Datasheet

  • AS083-LS2 - Human pyroelectric infrared sensor controller (ASCHIP)
  • AS004M1-08 - GaAs MMIC SPST FET Switch (Alpha Industries)
  • AS004M1-11 - GaAs MMIC SPST FET Switch (Alpha Industries)
  • AS004M2-08 - GaAs MMIC SPST FET Switch (Alpha Industries)
  • AS004M2-11 - GaAs MMIC SPST FET Switch (Alpha Industries)
  • AS004S2-11 - GaAs IC SPDT Switch (Alpha Industries)
  • AS006L1-00 - GaAs MMIC SPST FET (Alpha Industries)
  • AS006L1-01 - GaAs IC SPST Switch (Alpha Industries)

📌 All Tags

High Power Stacked Infrared Laser Diode Array Roithner
Roithner AS081Q1200W-like datasheet