Datasheet4U.com

AS081Q600W - High Power Stacked Infrared Laser Diode Array

Product Overview

Roithner

📥 Download Datasheet

AS081Q600W High Power Stacked Infrared Laser Diode Array by Roithner - Datasheet Preview — Datasheet preview – AS081Q600W

Datasheet Details

Part number	AS081Q600W
Manufacturer	Roithner
File Size	112.88 KB
Description	High Power Stacked Infrared Laser Diode Array
Datasheet	AS081Q600W Datasheet
Additional preview pages of the AS081Q600W datasheet.

Product details

Features

Output Power: 600 W qCW.
780-830 nm Emission Wavelength.
Spectral Width: ≤4 nm.
High Reliability, High Efficiency.
QCW stack can be designed according to the customer of non-standard products heat sink package.

📁 Similar Datasheet

AS083-LS2 - Human pyroelectric infrared sensor controller (ASCHIP)
AS004M1-08 - GaAs MMIC SPST FET Switch (Alpha Industries)
AS004M1-11 - GaAs MMIC SPST FET Switch (Alpha Industries)
AS004M2-08 - GaAs MMIC SPST FET Switch (Alpha Industries)
AS004M2-11 - GaAs MMIC SPST FET Switch (Alpha Industries)
AS004S2-11 - GaAs IC SPDT Switch (Alpha Industries)
AS006L1-00 - GaAs MMIC SPST FET (Alpha Industries)
AS006L1-01 - GaAs IC SPST Switch (Alpha Industries)

Other Datasheets by Roithner

AS081Q1200W - High Power Stacked Infrared Laser Diode Array
AS081Q15000W - High Power Stacked Infrared Laser Diode Array
AS081Q3000W - High Power Stacked Infrared Laser Diode Array
AS081Q300W - High Power Stacked Infrared Laser Diode Array
AS081Q5000W - High Power Stacked Infrared Laser Diode Array
AS081C100W - High Power Stacked Infrared Laser Diode Array

Published: Mar 12, 2015 |