Datasheet4U Logo Datasheet4U.com

AS098Q1200W

High Power Stacked Infrared Laser Diode Array

AS098Q1200W Features

* Output Power: 1200 W qCW

* 920-980 nm Emission Wavelength

* Spectral Width: ≤4 nm

* High Reliability, High Efficiency

* QCW stack can be designed according to the customer of non-standard products heat sink package Applications

* Laser Pumping

AS098Q1200W Datasheet (112.90 KB)

Preview of AS098Q1200W PDF

Datasheet Details

Part number:

AS098Q1200W

Manufacturer:

Roithner

File Size:

112.90 KB

Description:

High power stacked infrared laser diode array.

📁 Related Datasheet

AS098Q300W High Power Stacked Infrared Laser Diode Array (Roithner)

AS098Q600W High Power Stacked Infrared Laser Diode Array (Roithner)

AS098C100W High Power Stacked Infrared Laser Diode Array (Roithner)

AS098C60W High Power Stacked Infrared Laser Diode Array (Roithner)

AS004M1-08 GaAs MMIC SPST FET Switch (Alpha Industries)

AS004M1-11 GaAs MMIC SPST FET Switch (Alpha Industries)

AS004M2-08 GaAs MMIC SPST FET Switch (Alpha Industries)

AS004M2-11 GaAs MMIC SPST FET Switch (Alpha Industries)

AS004S2-11 GaAs IC SPDT Switch (Alpha Industries)

AS006L1-00 GaAs MMIC SPST FET (Alpha Industries)

TAGS

AS098Q1200W High Power Stacked Infrared Laser Diode Array Roithner

Image Gallery

AS098Q1200W Datasheet Preview Page 2

AS098Q1200W Distributor