RLT1550-100G - Infrared Laser Diode
RLT1550-100G TECHNICAL DATA Infrared Laser Diode Structure: GaInAsP/InP, SQW structure Lasing wavelength: typ.
1580 nm, multi mode Max.
optical power: 100 mW Package: 9 mm (SOT-148) PIN CONNECTION: 1) Laserdiode cathode 2) Laserdiode anode and photodiode cathode 3) Photodiode anode Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Optical Output Power Po cw Threshold Current Ith cw Operation Current Iop Po = 100 mW Operation Voltage Vop Po = 100 mW Lasing Wav
