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RLT1550-100G Datasheet - Roithner

RLT1550-100G Infrared Laser Diode

RLT1550-100G TECHNICAL DATA Infrared Laser Diode Structure: GaInAsP/InP, SQW structure Lasing wavelength: typ. 1580 nm, multi mode Max. optical power: 100 mW Package: 9 mm (SOT-148) PIN CONNECTION: 1) Laserdiode cathode 2) Laserdiode anode and photodiode cathode 3) Photodiode anode Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Optical Output Power Po cw Threshold Current Ith cw Operation Current Iop Po = 100 mW Operation Voltage Vop Po = 100 mW Lasing Wav.

RLT1550-100G_Roithner.pdf

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Datasheet Details

Part number:

RLT1550-100G

Manufacturer:

Roithner

File Size:

96.09 KB

Description:

Infrared laser diode.

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