RLT635-100G Datasheet - Roithner

RLT635-100G Laser Diode

RLT635-100G TECHNICAL DATA High Power Visible Laser Diode Emitting Aperatur: 1x100 µm² Lasing wavelength: 635 nm, typ. Max. optical power: 100 mW Package: 9 mm PIN CONNECTION: 1) Laserdiode cathode 2) Laserdiode anode 3) n.c. Absolute Maximum Ratings (Tc = 25°C) CHARACTERISTIC SYMBOL Optical Output Power Po LD Reverse Voltage VR(LD) PD Reverse Voltage VR(PD) Operating Temperature Top Storage Temperature Tstg RATING 100 0 .. +25 -10 .. +60 UNIT mW V V °C °C Optical-Electrical Characteristics.

RLT635-100G_Roithner.pdf