RLT808500G - High Power Infrared Laser Diode
RLT808500G TECHNICAL DATA High Power Infrared Laserdiode Structure: High Efficiency MOVCD Quantum Well Design Lasing wavelength: 808 nm typ. Output power: 500 mW, cw NOTE! Package: 9 mm LASERDIODE MUST BE COOLED! PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode Absolute Maximum Ratings (Tc=25°C) CHARACTERISTIC SYMBOL Optical Output Power LD Reverse Voltage PD Reverse Voltage Operating Temperature Storage Temperature Po VR(LD) VR.