RLT83500G TECHNICAL DATA High Power Infrared Laser Diode Lasing wavelength: 830 nm typ.
Max.
optical power: 500 mW, cw Emitting Aperture: 1x50 μm² Package: 9 mm PIN CONNECTION: 1) Laserdiode cathode 2) Laserdiode anode and photodiode cathode 3) Photodiode anode Specification (Tc = 25°C) CHARACTERISTIC Optical Output Power Threshold Current Operation Current Operation Voltage Slope Efficiency Series Resistance Central Wavelength Spectral Width Wavelength Temperature Coefficient Beam Divergence B
