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RLT855-10MG - Laser Diode

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Part number RLT855-10MG
Manufacturer Roithner
File Size 207.98 KB
Description Laser Diode
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Description

Optical Power (mW) Operation Temperature (oC) Storage Temperature (oC) LD Reverse Voltage (V) PD Reverse Voltage (V) SYMBOL Po Top Tstg VLDR VPDR RATED VALUE 5 -10 to +50 -40 to +85 2 30 Index Guided MQW Structure Wavelength : 855 nm (Typ.) Optical Power : 10 mW CW Threshold Current : 30 mA ( Typ.) Package Style : TO-18 (5.6 mmØ) OPTICAL AND ELECTRICAL CHARACTERISTICS ( Tc=25 oC ) DESCRIPTION Lasing Wavelength (nm) Threshold Current (mA) Operating Current (mA) Operating Voltage (V) Monitor

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