RU2013H
Ruichips
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N-channel advanced power mosfet.
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RU20130L - N-Channel Advanced Power MOSFET
(Ruichips)
RU20130L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 20V/130A, RDS (ON) =2.2mΩ(Typ.)@VGS=10V RDS (ON) =4.5mΩ(Typ.)@VGS=4.5V
• Super High Dense .
RU20120L - N-Channel Advanced Power MOSFET
(Ruichips)
RU20120L
N-Channel Advanced Power MOSFET
Features
• 20V/120A,
RDS (ON) =2.3mΩ(Typ.)@VGS=10V RDS (ON) =4.2mΩ(Typ.)@VGS=4.5V
• Super High Dense Cell De.
RU2020H - N-Channel Advanced Power MOSFET
(Ruichips)
RU2020H
N-Channel Advanced Power MOSFET
MOSFET
Features
• 20V/20A, RDS (ON) =3.5mΩ (Typ.) @ VGS=10V RDS (ON) =3.8mΩ (Typ.) @ VGS=4.5V RDS (ON) =5.6mΩ.
RU2021H - N-Channel Advanced Power MOSFET
(Ruichips)
Features
• 20V/20A, RDS (ON) =4mΩ (Typ.) @ VGS=10V RDS (ON) =5mΩ (Typ.) @ VGS=4.5V
• Super High Dense Cell Design
• Low RDS(ON)
• Reliable and Rugged
.
RU205B - N-Channel Advanced Power MOSFET
(Ruichips)
RU205B
N-Channel Advanced Power MOSFET
MOSFET
Features
• 20V/5A, RDS (ON) =30mΩ (Typ.) @ VGS=4.5V RDS (ON) =38mΩ (Typ.) @ VGS=2.5V
• Low RDS (ON)
• S.
RU206G - N-Channel Advanced Power MOSFET
(Ruichips)
RU206G
N-Channel Advanced Power MOSFET
MOSFET
Features
• 20V/6A, RDS (ON) =18mΩ (Typ.) @ VGS=4.5V RDS (ON) =24mΩ (Typ.) @ VGS=2.5V
• Super High Dense.
RU207C - N-Channel Advanced Power MOSFET
(Ruichips)
sales.Mr.wang13826508770 .sztssd.
RU207C
N-Channel Advanced Power MOSFET
Features
• 20V/6A, RDS (ON) =10mΩ(Typ.)@VGS=4.5V RDS (ON) =15mΩ(Typ.).
RU2090M - N-Channel Advanced Power MOSFET
(Ruichips)
.
RU20A - FAST RECOVERY RECTIFIER DIODE
(EIC)
.eicsemi.
RU20A
PRV : 600 Volts Io : 1.5 Ampere
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
FAST RECOVERY RECTIFIER DIODE
D2
FEATURES :
.
RU20A - Fast-Recovery Rectifier Diodes
(Sanken electric)
SANKEN ELECTRIC CO., LTD.
1. Scope The present specifications shall apply to an RU20A.
2. Outline
Type
Silicon Diode
Structure
Resin Molded
App.
