RU2021H
Features
- 20V/20A, RDS (ON) =4mΩ (Typ.) @ VGS=10V RDS (ON) =5mΩ (Typ.) @ VGS=4.5V
- Super High Dense Cell Design
- Low RDS(ON)
- Reliable and Rugged
- Lead Free and Green Available
N-Channel Advanced Power MOSFET
MOSFET
Pin Description
SOP-8
Applications
- DC/DC Converter
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter mon Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TA=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
TA=25°C
②
RθJA
Continuous Drain Current(VGS=10V)
TA=25°C TA=70°C
Maximum Power Dissipation
TA=25°C TA=70°C
Thermal Resistance-Junction to Ambient
Rating
20 ±12 150 -55 to 150 4.4
①
70 20 16 3.1 2...
