RU40191S Datasheet - Ruichips

RU40191S - N-Channel Advanced Power MOSFET

D G S TO263 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300.

RU40191S Features

* 40V/190A, RDS (ON) =1.8mΩ(Typ.)@VGS=10V

* Super High Dense Cell Design

* Ultra Low On-Resistance

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* DC-DC Converters and Off-line UPS

* Switching App

RU40191S-Ruichips.pdf