RU40E32L Datasheet - Ruichips

RU40E32L N-Channel Advanced Power MOSFET

TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat S.

RU40E32L Features

* 40V/45A, RDS (ON) =9mΩ(tpy.)@VGS=10V RDS (ON) =15mΩ(tpy.)@VGS=4.5V

* Super High Dense Cell Design

* ESD protected

* Reliable and Rugged

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Power Mana

RU40E32L-Ruichips.pdf

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Datasheet Details

Part number:

RU40E32L

Manufacturer:

Ruichips

File Size:

275.09 KB

Description:

N-channel advanced power mosfet.

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RU40E32L RU40E32L N-Channel Advanced Power MOSFET Ruichips

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