RU40E32L - N-Channel Advanced Power MOSFET
TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat S
RU40E32L Features
* 40V/45A, RDS (ON) =9mΩ(tpy.)@VGS=10V RDS (ON) =15mΩ(tpy.)@VGS=4.5V
* Super High Dense Cell Design
* ESD protected
* Reliable and Rugged
* 100% avalanche tested
* Lead Free and Green Devices Available (RoHS Compliant) Applications
* Power Mana
