RU40E80L - N-Channel Advanced Power MOSFET
D G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① I
RU40E80L Features
* 40V/80A, RDS (ON) =4.5mΩ(Typ.)@VGS=10V RDS (ON) =5.5mΩ(Typ.)@VGS=4.5V
* Low RDS (ON)
* Super High Dense Cell Design
* ESD protected
* 100% avalanche tested
* Lead Free and Green Devices Available (RoHS Compliant) Applications
* Switching Appl
