RU80T4H Datasheet (Ruichips) - N-Channel Advanced Power MOSFET

RU80T4H, N-Channel Advanced Power MOSFET

D2 D2 D1 D1 G2 S2 G1 pin1 S1 SOP-8 D1 D2 G1 G2 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current

RU80T4H Features

* 80V/4A, RDS (ON) =70mΩ(Typ.)@VGS=10V RDS (ON) =80mΩ(Typ.)@VGS=4.5V RDS (ON) =90mΩ(Typ.)@VGS=2.5V

* Low On-Resistance

* Super High Dense Cell Design

* Reliable and Rugged

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* DC/DC Co