K1B3216BDD Datasheet (SAMSUNG ELECTRONICS) - 2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory

K1B3216BDD, 2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory

The world is moving into the mobile multi-media era and therefore the mobile handsets need much bigger memory capacity to handle the multi-media data.

SAMSUNG’s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.

UtRAM

K1B3216BDD Document Title 2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory www.DataSheet4U.com UtRAM Revision History Revision No.

History 0.0 Initial Draft - Design target Draft Date Remark September 02, 2004 Preliminary 0.1 Revised - Corrected the name of 9th row of balls on the pakage to ’J’ from ’I’ on page.2 and page.42 Finalize November 01, 2004 Preliminary 1.0 April 06, 2005 Final The attached datasheets are provided by SAMSUNG Electronics.

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