Download Datasheet (827.26 KB)
K1B6416B6C
Samsung semiconductor
827.26 KB
4mx16 bit synchronous burst uni-transistor random access memory.
K1B6416B6C
Document Title
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
www.DataS.
The world is moving into the mobile multi-media era and therefore the mobile handsets need much bigg.
📁 Related Datasheet
K1B3216BDD - 2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAM
(Samsung Semiconductor)
K1B3216BDD
Document Title
2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0 Initial Dr.
K1B3216BDD - 2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
(SAMSUNG ELECTRONICS)
K1B3216BDD
Document Title
2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
..
UtRAM
Revision History
Revision No. H.
K1B5616BAM - 256Mb (16M x 16 bit) UtRAM
(Samsung Electronics)
K1B5616BA(B)M
Preliminary UtRAM
..
256Mb (16M x 16 bit) UtRAM
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PROD.
K1B5616BBM - 256Mb (16M x 16 bit) UtRAM
(Samsung Electronics)
K1B5616BA(B)M
Preliminary UtRAM
..
256Mb (16M x 16 bit) UtRAM
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PROD.
K10 - 15 Amp General Purpose Miniature Relay
(Tyco Electronics)
Catalog 1308242 Issued 3-03
P&B
K10 series
15 Amp General Purpose Miniature Relay
File E22575 File LR15734
Users should thoroughly review the techni.
K1000MA600 - Medium Voltage Thyristor
(IXYS)
WESTCODE
An IXYS Company
Date:- 22 June, 2011 Data Sheet Issue:- P1
Prospectve Data
Medium Voltage Thyristor Type K1000M#600 to K1000M#650
Developme.
TAGS
Image Gallery
