K1B6416B6C Datasheet - Samsung semiconductor

K1B6416B6C 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory

The world is moving into the mobile multi-media era and therefore the mobile handsets need much bigger memory capacity to handle the multi-media data. SAMSUNG’s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market. UtRAM .

K1B6416B6C Document Title 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory www.DataSheet4U.com UtRAM Revision History Revision No. History 0.0 Initial Draft - Design target Revised - Deleted Deep Power Down Mode support Revised - Changed product code from K1B6416B7C into K1B6416B6C Draft Date March 11, 2004 Remark Advance 0.1 April 19, 2004 Advance 0.2 May 10, 2004 Advance 0.3 Revised September 1, 2004 Preliminary - Filled out Package type(54ball FBGA 6.0mm x 8.0mm) -.

K1B6416B6C_Samsungsemiconductor.pdf