K1B6416B6C Datasheet (Samsung semiconductor) - 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory

K1B6416B6C, 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory

The world is moving into the mobile multi-media era and therefore the mobile handsets need much bigger memory capacity to handle the multi-media data.

SAMSUNG’s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.

UtRAM

K1B6416B6C Document Title 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory www.DataSheet4U.com UtRAM Revision History Revision No.

History 0.0 Initial Draft - Design target Revised - Deleted Deep Power Down Mode support Revised - Changed product code from K1B6416B7C into K1B6416B6C Draft Date March 11, 2004 Remark Advance 0.1 April 19, 2004 Advance 0.2 May 10, 2004 Advance 0.3 Revised September 1, 2004 Preliminary - Filled out Package type(54ball FBGA 6.0mm x 8.0mm) -