K1B3216BDD
Samsung Semiconductor
800.98kb
2m x 16 bit synchronous burst uni-transistor cmos ram. The world is moving into the mobile multi-media era and therefore the mobile handsets need much bigger memory capacity to handle the
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K1B3216BDD - 2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
(SAMSUNG ELECTRONICS)
K1B3216BDD
Document Title
2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
..
UtRAM
Revision History
Revision No. H.
K1B5616BAM - 256Mb (16M x 16 bit) UtRAM
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K1B5616BA(B)M
Preliminary UtRAM
..
256Mb (16M x 16 bit) UtRAM
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PROD.
K1B5616BBM - 256Mb (16M x 16 bit) UtRAM
(Samsung Electronics)
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Preliminary UtRAM
..
256Mb (16M x 16 bit) UtRAM
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PROD.
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Document Title
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
..
UtRAM
Revision History
Revision No. H.
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File E22575 File LR15734
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