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SW226N

N-Channel MOSFET

SW226N Features

* High ruggedness

* RDS(ON) (Max 2.3 Ω)@VGS=10V

* Gate Charge (Typical 30nC)

* Improved dv/dt Capability

* 100% Avalanche Tested 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power

SW226N General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high ef.

SW226N Datasheet (455.07 KB)

Preview of SW226N PDF

Datasheet Details

Part number:

SW226N

Manufacturer:

SAMWIN

File Size:

455.07 KB

Description:

N-channel mosfet.

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TAGS

SW226N N-Channel MOSFET SAMWIN

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