SW20N50D Datasheet, Mosfet, Seawon

SW20N50D Features

  • Mosfet
  • Low gate charge
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS compliant
  • JEDEC Qualification N-channel MOSFET BVDSS 500V ID 20A R

PDF File Details

Part number:

SW20N50D

Manufacturer:

Seawon

File Size:

737.40kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Datasheet Preview: SW20N50D 📥 Download PDF (737.40kb)
Page 2 of SW20N50D Page 3 of SW20N50D

TAGS

SW20N50D
N-channel
MOSFET
Seawon

📁 Related Datasheet

SW20N50 - N-channel Power MOSFET (SAMWIN)
SAMWIN SW20N50 N-channel Power MOSFET Features ■ High ruggedness MOSFET ■ RDS(ON) (Max 0.27Ω)@VGS=10V ■ Gate Charge (Max 80nC) ■ Improved dv/dt Capa.

SW20N50U - MOSFET (SEMIPOWER)
SAMWIN SW20N50U N-channel TO-3P MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.27Ω)@VGS=10V ■ Gate Charge (Typ 103 nC) ■ Improved dv/dt Capabil.

SW20N60 - N-channel Power MOSFET (SAMWIN)
SAMWIN SW20N60 N-channel Power MOSFET Features ■ High ruggedness MOSFET ■ RDS(ON) (Max 0.3Ω)@VGS=10V ■ Gate Charge (Max 80 nC) ■ Improved dv/dt Capa.

SW20N60U - MOSFET (SEMIPOWER)
SAMWIN SW20N60U N-channel TO-3P MOSFET Features TO-3P ■ High ruggedness ■ RDS(ON) (Max0.45Ω)@VGS=10V ■ Gate Charge (Typical 108nC) ■ Improved dv/.

SW20N65K - MOSFET (SEMIPOWER)
SAMWIN SW20N65K N-channel TO-220/TO-220F MOSFET Features ■ High ruggedness ■ RDS(ON) (Max0.19Ω)@VGS=10V ■ Gate Charge (Typical 60nC) ■ Improved dv/.

SW201 - Quad SPST JFET Analog Switches (Analog Devices)
.. DataShee . . . DataSheet 4 U . .. et4U. DataShee DataShee.

SW201 - Quad SPST JFET Analog Switches (Precision Monolithics)
.. . DataShee . . DataSheet 4 U . .. et4U. . D.

SW201 - GaAs SPDT Switch DC-2 Ghz (MA-Com)
.. . DataShee . . DataSheet 4 U . .

SW20CXC950 - GENERAL PURPOSE HIGH POWER STANDARD RECTIFIER (PST)
Technical Data : AD-031 Page 1 of 2 PST SW*CXC950- Standard Rectifier 1400 - 2000 VRRM; 2400 A avg ***************************************************.

SW210N04 - MOSFET (SEMIPOWER)
SAMWIN SW210N04 N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max4.5mΩ)@VGS=10V ■ Gate Charge (Typical 256nC) ■ Improved d.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts