SW20N50U Datasheet, Mosfet, SEMIPOWER

SW20N50U Features

• Mosfet
• High ruggedness
• RDS(ON) (Max 0.27Ω)@VGS=10V
• Gate Charge (Typ 103 nC)
• Improved dv/dt Capability
• 100% Avalanche Tested TO-3P 12 3 1. Gat

PDF File Details

Part number:

SW20N50U

Manufacturer:

SEMIPOWER

File Size:

592.04kb

Download:

📄 Datasheet

Description:

Mosfet. This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteri

TAGS

SW20N50U

SEMIPOWER

📁 Related Datasheet

SW20N50 - N-channel Power MOSFET (SAMWIN)
SAMWIN SW20N50 N-channel Power MOSFET Features ■ High ruggedness MOSFET ■ RDS(ON) (Max 0.27Ω)@VGS=10V ■ Gate Charge (Max 80nC) ■ Improved dv/dt Capa.

SW20N50D - N-channel MOSFET (Seawon)
SW20N50D Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS pliant  JEDEC Qualification N-channel MOSFET BVDSS .

SW20N60 - N-channel Power MOSFET (SAMWIN)
SAMWIN SW20N60 N-channel Power MOSFET Features ■ High ruggedness MOSFET ■ RDS(ON) (Max 0.3Ω)@VGS=10V ■ Gate Charge (Max 80 nC) ■ Improved dv/dt Capa.

SW20N60U - MOSFET (SEMIPOWER)
SAMWIN SW20N60U N-channel TO-3P MOSFET Features TO-3P ■ High ruggedness ■ RDS(ON) (Max0.45Ω)@VGS=10V ■ Gate Charge (Typical 108nC) ■ Improved dv/.

SW20N65K - MOSFET (SEMIPOWER)
SAMWIN SW20N65K N-channel TO-220/TO-220F MOSFET Features ■ High ruggedness ■ RDS(ON) (Max0.19Ω)@VGS=10V ■ Gate Charge (Typical 60nC) ■ Improved dv/.

SW201 - Quad SPST JFET Analog Switches (Analog Devices)
.. DataShee . . . DataSheet 4 U . .. et4U. DataShee DataShee.

SW201 - Quad SPST JFET Analog Switches (Precision Monolithics)
.. . DataShee . . DataSheet 4 U . .. et4U. . D.

SW201 - GaAs SPDT Switch DC-2 Ghz (MA-Com)
.. . DataShee . . DataSheet 4 U . .

SW20CXC950 - GENERAL PURPOSE HIGH POWER STANDARD RECTIFIER (PST)
Technical Data : AD-031 Page 1 of 2 PST SW*CXC950- Standard Rectifier 1400 - 2000 VRRM; 2400 A avg ***************************************************.

SW210N04 - MOSFET (SEMIPOWER)
SAMWIN SW210N04 N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max4.5mΩ)@VGS=10V ■ Gate Charge (Typical 256nC) ■ Improved d.