SEMIPOWER Datasheet | Specifications & PDF Download

www.irantk.ir SW2601/SW2602 MOSFET SW2602 PWM ，AC/DC 。，TL431, 。 ，CSRs ； ,。, 。，PFM , ，PWM。 SW2602 ，，VDD ， VDD 。，SW2602 EMI ，SW2602 。 AC ，5%，5% ，

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www.irantk.ir SW2601/SW2602 MOSFET SW2602 PWM ，AC/DC 。，TL431, 。 ，CSRs ； ,。, 。，PFM , ，PWM。 SW2602 ，，VDD ， VDD 。，SW2602 EMI ，SW2602 。 AC ，5%，5% ，

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SAMWIN SW6N60 N-channel MOSFET Features TO-220F TO-251 TO-252 ■ High ruggedness ■ RDS(ON) (Max 1.5Ω)@VGS=10V ■ Gate Charge (Typical 29nC) ■ Imp

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Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 1.2A FEATURES ▪For surface mounted applications ▪Low

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Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 1.2A FEATURES ▪For surface mounted applications ▪Low

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Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 1.2A FEATURES ▪For surface mounted applications ▪Low

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Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 1.2A FEATURES ▪For surface mounted applications ▪Low

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Surface Mount Fast Recovery Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 3 A FEATURES • For surface mounted applications • Low profile

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SAMWIN SW6N65 N-channel MOSFET Features TO-220F TO-251 TO-252 ■ High ruggedness ■ RDS(ON) (Max 1.5Ω)@VGS=10V ■ Gate Charge (Typ 20nC) ■ Improve

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SAMWIN SW30CPF06 DIODE Features ■ Ultrafast recovery time ■ Low forward voltage drop ■ 150 °C operating junction temperature ■ Low leakage current

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SAMWIN SW630A N-channel TO-220/D-PAK MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.4 Ω)@VGS=10V ■ Gate Charge (Typ 22nC) ■ Improved dv/dt Capa

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Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 1.2A FEATURES ▪For surface mounted applications ▪Low

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Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 3.0A Features • Metal silicon junction, majority carrier cond

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SAMWIN SW1N55D N-channel IPAK MOSFET Features TO-251 ■ High ruggedness ■ RDS(ON) (Max6.5Ω)@VGS=10V ■ Gate Charge (Typical 7nC) ■ Improved dv/dt C

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SAMWIN SW1N70A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 15 Ω)@VGS=10V ■ Gate Charge (Max 5nC) ■ Improved dv/dt Capability ■ 100%

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SW10N65K N-channel Enhanced mode TO-220/TO-220F/TO-251N /TO-252/ TO-262/TO-220SF MOSFET Features TO-220 TO-220F TO-251N TO-252 TO-262 TO-220SF BVD

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SW601Q Features Low RDS(ON) (Typ 540Ω)@VGS=0V,ID=3mA  High Switching Speed Application:LED,Charger N-channel Depletion mode SOT23 MOSFET SOT23 3

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SAMWIN SW60N06T N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max8mΩ)@VGS=10V ■ Gate Charge (Typical 77nC) ■ Improved dv/d

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SURFACE MOUNT ULTRAFAST RECOVERY RECTIFIER Reverse Voltage - 50 to 1000 V Forward Current - 2 A FEATURES • For surface mounted applications • Low prof

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SAMWIN SW6N90 N-channel TO-262 MOSFET TO-262 Features ■ High ruggedness ■ RDS(ON) (Max 2.3 Ω)@VGS=10V ■ Gate Charge (Typical 40nC) ■ Improved dv/dt

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