.
SEMIPOWER
MB10F-05 - 0.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
MB1F-05 THRU MB10F-05 0.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER FEATURES: Glass Passivated Chip Juntion Reverse Voltage - 100 to 1000 V F.
SEMIPOWER
4N60B - N-channel I-PAK/D-PAK/TO-220F MOSFET
SAMWIN TO-251 TO-252 TO-220F SW4N60B N-channel I-PAK/D-PAK/TO-220F MOSFET BVDSS : 600V ID 1 Features ■ High ruggedness ■ RDS(ON) (Max 2.5 Ω)@VGS=10V.
SEMIPOWER
SW7N60D - N-Channel MOSFET
SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features TO-220F TO-220 TO-251 TO-252 High ruggedness Low RDS(ON) (Typ .
SEMIPOWER
SW5N60 - N-channel TO-220F MOSFET
SAMWIN Features ■ High ruggedness ■ RDS(ON) (Max 2.2Ω)@VGS=10V ■ Gate Charge (Typical 22nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested SW5N6.
SEMIPOWER
SW2N60D - MOSFET
SAMWIN SW2N60D N-channel I-PAK/D-PAK/TO220F MOSFET Features TO-251 TO-252 TO-220F ■ High ruggedness ■ RDS(ON) (Max 4.5Ω)@VGS=10V ■ Gate Charge.
SEMIPOWER
SW180N75A - N-Channel MOSFET
SW180N75A Features High ruggedness Low RDS(ON) (Typ 2.8mΩ)@VGS=10V Low Gate Charge (Typ 178nC) Improved dv/dt Capability 100% Avalanche Tes.
SEMIPOWER
SW1N80A - MOSFET
SAMWIN SW1N80A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 16 Ω)@VGS=10V ■ Gate Charge (Max 7nC) ■ Improved dv/dt Capability ■ 100% .
SEMiPOWER
SW2604 - Built-in high-voltage transistor Current Mode PWM Controllers
SW2604 PWM ： SW2604 、、， ；（85—264V）， 8—12W。 ， DVD 、、、LCD 。 ： ；， 10 、，， ，， 、、 ， 0.3W ： DVD、DVB ： 1 6 Free Datasheet http://www.datashe.
SEMiPOWER
SW2602 - Primary side switching power supply controller
www.irantk.ir SW2601/SW2602 MOSFET SW2602 PWM ，AC/DC 。，TL431, 。 ，CSRs ； ,。, 。，PFM , ，PWM。 SW2602 ，，VDD ， VDD 。，SW2602 EMI ，SW2602 。 AC ，5%，5% ，.
SEMIPOWER
SW20N65K - MOSFET
SAMWIN SW20N65K N-channel TO-220/TO-220F MOSFET Features ■ High ruggedness ■ RDS(ON) (Max0.19Ω)@VGS=10V ■ Gate Charge (Typical 60nC) ■ Improved dv/.
SEMIPOWER
SW4N60D - MOSFET
SAMWIN SW4N60D N-channel TO-220F/I-PAKN/D-PAK MOSFET Features TO-220F TO-251N TO-252 ■ High ruggedness ■ RDS(ON) (Max 2.2Ω)@VGS=10V ■ Gate Charge.
SEMIPOWER
SW4N60K - N-Channel MOSFET
SW4N60K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features High ruggedness Low RDS(ON) (Typ 1Ω)@VGS=10V Low Gate Charge (Typ 13nC) .
SEMIPOWER
SW9N90 - MOSFET
SAMWIN SW9N90 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.45 Ω)@VGS=10V ■ Gate Charge (Typ 60nC) ■ Improved dv/dt Capability ■ 100.
SEMIPOWER
SW1N55D - MOSFET
SAMWIN SW1N55D N-channel IPAK MOSFET Features TO-251 ■ High ruggedness ■ RDS(ON) (Max6.5Ω)@VGS=10V ■ Gate Charge (Typical 7nC) ■ Improved dv/dt C.
SEMIPOWER
SW1N60 - MOSFET
SAMWIN SW1N60 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 12 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% A.
SEMIPOWER
SW1N60A - MOSFET
SAMWIN SW1N60A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 15 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% .
SEMIPOWER
SW1N60D - MOSFET
SAMWIN SW1N60D N-channel I-PAK/TO-92 MOSFET Features TO-251 TO-92 ■ High ruggedness ■ RDS(ON) (Max8.5Ω)@VGS=10V ■ Gate Charge (Typical 6.8 nC) ■.
SEMIPOWER
SW20N50U - MOSFET
SAMWIN SW20N50U N-channel TO-3P MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.27Ω)@VGS=10V ■ Gate Charge (Typ 103 nC) ■ Improved dv/dt Capabil.
SEMIPOWER
SW20N60U - MOSFET
SAMWIN SW20N60U N-channel TO-3P MOSFET Features TO-3P ■ High ruggedness ■ RDS(ON) (Max0.45Ω)@VGS=10V ■ Gate Charge (Typical 108nC) ■ Improved dv/.
SEMIPOWER
SW1N60L - MOSFET
SAMWIN SW1N60L N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 23 Ω)@VGS=10V ■ Gate Charge (Max 4.5nC) ■ Improved dv/dt Capability ■ 100.
