SEMIPOWER Datasheet | Specifications & PDF Download

www.irantk.ir SW2601/SW2602 MOSFET SW2602 PWM ，AC/DC 。，TL431, 。 ，CSRs ； ,。, 。，PFM , ，PWM。 SW2602 ，，VDD ， VDD 。，SW2602 EMI ，SW2602 。 AC ，5%，5% ，

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SW2604 PWM ： SW2604 、、， ；（85—264V）， 8—12W。 ， DVD 、、、LCD 。 ： ；， 10 、，， ，， 、、 ， 0.3W ： DVD、DVB ： 1 6 Free Datasheet http://www.datashe

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SAMWIN TO-251 TO-252 TO-220F SW4N60B N-channel I-PAK/D-PAK/TO-220F MOSFET BVDSS : 600V ID 1 Features ■ High ruggedness ■ RDS(ON) (Max 2.5 Ω)@VGS=10V

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www.irantk.ir SW2601/SW2602 MOSFET SW2602 PWM ，AC/DC 。，TL431, 。 ，CSRs ； ,。, 。，PFM , ，PWM。 SW2602 ，，VDD ， VDD 。，SW2602 EMI ，SW2602 。 AC ，5%，5% ，

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SAMWIN Features ■ High ruggedness ■ RDS(ON) (Max 2.2Ω)@VGS=10V ■ Gate Charge (Typical 22nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested SW5N6

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SAMWIN SW1N80A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 16 Ω)@VGS=10V ■ Gate Charge (Max 7nC) ■ Improved dv/dt Capability ■ 100%

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SAMWIN Features ■ High ruggedness ■ RDS(ON) (Max 1.5 Ω)@VGS=10V ■ Gate Charge (Typical 57nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested SW8N

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SAMWIN SW150N08A N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max 5.1m Ω)@VGS=10V ■ Gate Charge (Typ 143nC) ■ Improved dv

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FR101W THRU FR107W Surface Mount Fast Recovery Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 1 A FEATURES ▪ For surface mounted applica

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SPM100GB601S1 2-PACK IGBT Module 100A 600V General Description IGBT power module provides ultra low conduction loss as well as short circuit ruggedn

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Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 3.0A Features • Metal silicon junction, majority carrier cond

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SAMWIN SW50N06T N-channel D-PAK/TO-220 MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 16.8mΩ)@VGS=10V ■ Gate Charge (Typ 41nC) ■ Improved dv/dt C

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SAMWIN SW15N50 N-channel TO-220F MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.32Ω)@VGS=10V ■ Gate Charge (Typ 66 nC) ■ Improved dv/dt Capabil

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SW180N75A Features  High ruggedness  Low RDS(ON) (Typ 2.8mΩ)@VGS=10V  Low Gate Charge (Typ 178nC)  Improved dv/dt Capability  100% Avalanche Tes

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Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 3.0A Features • Metal silicon junction, majority carrier cond

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Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 3.0A Features • Metal silicon junction, majority carrier cond

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SW4N60K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features  High ruggedness  Low RDS(ON) (Typ 1Ω)@VGS=10V  Low Gate Charge (Typ 13nC)

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SAMWIN SW100N10B N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max 10.5m Ω)@VGS=10V ■ Gate Charge (Typ 106nC) ■ Improved d

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SW601Q Features Low RDS(ON) (Typ 540Ω)@VGS=0V,ID=3mA  High Switching Speed Application:LED,Charger N-channel Depletion mode SOT23 MOSFET SOT23 3

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SAMWIN SW30CPF06 DIODE Features ■ Ultrafast recovery time ■ Low forward voltage drop ■ 150 °C operating junction temperature ■ Low leakage current

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