SEMIPOWER Datasheet | Specifications & PDF Download

Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 3.0A FEATURES • Metal silicon junction, majority carrier cond

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Surface Mount Fast Recovery Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 3 A FEATURES • For surface mounted applications • Low profile

Rating: 1 ★ (4 votes)

SAMWIN SW7N60R N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max1.25Ω)@VGS=10V ■ Gate Charge (Typical 19nC) ■ Improved dv/

Rating: 1 ★ (4 votes)

SAMWIN SW2N70 Features ■ High ruggedness ■ RDS(ON) (Max 7 Ω)@VGS=10V ■ Gate Charge (Max 5nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO

Rating: 1 ★ (4 votes)

SAMWIN SW6N65 N-channel MOSFET Features TO-220F TO-251 TO-252 ■ High ruggedness ■ RDS(ON) (Max 1.5Ω)@VGS=10V ■ Gate Charge (Typ 20nC) ■ Improve

Rating: 1 ★ (4 votes)

SAMWIN SW100N10B N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max 10.5m Ω)@VGS=10V ■ Gate Charge (Typ 106nC) ■ Improved d

Rating: 1 ★ (4 votes)

SW2604 PWM ： SW2604 、、， ；（85—264V）， 8—12W。 ， DVD 、、、LCD 。 ： ；， 10 、，， ，， 、、 ， 0.3W ： DVD、DVB ： 1 6 Free Datasheet http://www.datashe

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Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 3.0A Features • Metal silicon junction, majority carrier cond

Rating: 1 ★ (3 votes)

Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 2.0A Features • Metal silicon junction, majority carrier cond

Rating: 1 ★ (3 votes)

Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 2.0A Features • Metal silicon junction, majority carrier cond

Rating: 1 ★ (3 votes)

www.irantk.ir SW2601/SW2602 MOSFET SW2602 PWM ，AC/DC 。，TL431, 。 ，CSRs ； ,。, 。，PFM , ，PWM。 SW2602 ，，VDD ， VDD 。，SW2602 EMI ，SW2602 。 AC ，5%，5% ，

Rating: 1 ★ (3 votes)

SAMWIN SW4N60D N-channel TO-220F/I-PAKN/D-PAK MOSFET Features TO-220F TO-251N TO-252 ■ High ruggedness ■ RDS(ON) (Max 2.2Ω)@VGS=10V ■ Gate Charge

Rating: 1 ★ (3 votes)

SW4N60K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features  High ruggedness  Low RDS(ON) (Typ 1Ω)@VGS=10V  Low Gate Charge (Typ 13nC)

Rating: 1 ★ (3 votes)

SAMWIN SW1N70C Features ■ High ruggedness ■ RDS(ON) (Max 16 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested

Rating: 1 ★ (3 votes)

SAMWIN SW5N80 N-channel MOSFET Features TO-220F ■ High ruggedness ■ RDS(ON) (Max 1.8 Ω)@VGS=10V ■ Gate Charge (Typ 26nC) ■ Improved dv/dt Capabil

Rating: 1 ★ (3 votes)

SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features TO-220F TO-220 TO-251 TO-252  High ruggedness  Low RDS(ON) (Typ

Rating: 1 ★ (3 votes)

SAMWIN SW7N60H N-channel TO-220F MOSFET Features TO-220F ■ High ruggedness ■ RDS(ON) (Max 1.32Ω)@VGS=10V ■ Gate Charge (Typical 28nC) ■ Improved

Rating: 1 ★ (3 votes)

SAMWIN SW7N60K N-channel TO-220F/I-PAK MOSFET Features TO-220F TO-251 ■ High ruggedness ■ RDS(ON) (Max 0.6Ω)@VGS=10V ■ Gate Charge (Typical 21nC

Rating: 1 ★ (3 votes)

SW10N65K N-channel Enhanced mode TO-220/TO-220F/TO-251N /TO-252/ TO-262/TO-220SF MOSFET Features TO-220 TO-220F TO-251N TO-252 TO-262 TO-220SF BVD

Rating: 1 ★ (3 votes)

SAMWIN SW2N60D N-channel I-PAK/D-PAK/TO220F MOSFET Features TO-251 TO-252 TO-220F ■ High ruggedness ■ RDS(ON) (Max 4.5Ω)@VGS=10V ■ Gate Charge

Rating: 1 ★ (3 votes)