4N60B
Features
- High ruggedness
- RDS(ON) (Max 2.5 Ω)@VGS=10V
- Gate Charge (Typ 11n C)
- Improved dv/dt Capability
- 100% Avalanche Tested
: 4A
RDS(ON) : 2.5Ω
2 1 3 2 3 1 2 2 3 1 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
Order Codes
Item 1 2 3 Sales Type SW I 4N60 SW D 4N60 SW F 4N60 Marking SW4N60B SW4N60B SW4N60B Package TO-251 TO-252 TO-220F Packaging TUBE REEL TUBE
Absolute maximum ratings
Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current Continuous Drain Current Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy...
