4N60B Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
4N60B Key Features
- High ruggedness
- RDS(ON) (Max 2.5 Ω)@VGS=10V
- Gate Charge (Typ 11nC)
- Improved dv/dt Capability
- 100% Avalanche Tested