Unisonic Technologies 4N60
4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.| Part No. | 4N60 |
|---|---|
| Datasheet | 4N60 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 2.5 Ω @ VGS = 10 V, ID = 2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness● SYMBOL Power MOSFET Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-061.AB 4N60 Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 4N60L-TA3-T 4N60G-TA3-T TO-220 4N60L-TF1-T 4N60G-TF1-T TO-220F1 4N60L-TF2-T 4N60G-TF2-T TO-220F2 4N60L-TF3-T 4N60G-TF3-T TO-220F 4N60L-TF3T-T 4N60G-TF3T-T TO-220F3 4N60L-TM3-T 4N60G-TM3-T TO-251 4N60L-TMS-T 4N60G-TMS-T TO-251S 4N60L-TN3-R 4N60G-TN3-R TO-252 4N60L-TND-R 4N60G-TND-R TO-252D 4N60L-T2Q-T 4N60G-T2Q-T TO-262 4N60L-TQ2-T 4N60G-TQ2-T TO-263 4N60L-TQ2-R 4N60G-TQ2-R TO-263 4N60L-P5060-R 4N60G-P5060-R PDFN5×6 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12345678 Packing GDS - - - - - Tube GDS - - - - - Tube GDS - - - - - Tube GDS - - - - - Tube GDS - - - - - Tube GDS - - - - - Tube GDS - - - - - Tube G D S - - -...
