Datasheet Summary
SEMICONDUCTORS
600V N-CHANNEL MOSFET
1.Description
The KIA4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
2. Features
- 600V, RDS(ON) =2.1Ω@ VGS=10V
- Ultra low gate charge (typ Qg=15.5nC)
- Low Reverse capacitance (typ Crss=8pF)
- 100% avalanche tested
- RoHS pliant
3. Pin configuration
Pin Function 1 Gate 2 Drain 3 Source
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SEMICONDUCTORS
600V...