4N60H Description
The KIA4N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
4N60H Key Features
- RDS(ON) =2.3Ω@ VGS=10V
- Low gate charge (typical 13.5nC)
- High ruggedness
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability