4N60H
Overview
- RDS(ON) =2.3Ω@ VGS=10V
- Low gate charge (typical 13.5nC)
- High ruggedness
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability
| Part | 4N60H |
|---|---|
| Description | N-CHANNEL MOSFET |
| Category | MOSFET |
| Manufacturer | KIA |
| Size | 467.42 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 4N60 | Inchange Semiconductor | N-Channel Mosfet Transistor |
| 4N60C | Maple Semiconductor | 600V N-Channel MOSFET |
| 4N60F | GFD | 600V N-Channel MOSFET |
| 4N60 | Nell Power Semiconductor | N-Channel Power MOSFET |
| 4N60-C | Unisonic Technologies | N-CHANNEL POWER MOSFET |