4N60P
Description
:
The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
Features
:
2 DRAIN
- -
RDS(ON) =2.5 Ohms @VGS Ultra low gate charge
=10V
- Low reverse transfer Capacitance
1 GATE
- Fast switching capability
- Avalanche energy Specified
- Improved dv/dt capability, high ruggedness
3 SOURCE
DRAIN CURRENT 4 AMPERES
DRAIN SOURCE VOLTAGE 600 VOLTAGE
D-PAK3/(TO-251)
D-PAK/(TO-252)
TO-220 TO-220F
Maximum Ratings(T A=25 C Unless Otherwise Specified)
Rating
Symbol
Value
Unit
Drain-Source Voltage Gate-Source Voltage
VDSS
600 V
VGSS ±30
Avalanche Current
- (Note 1)
Continuous Drain Current @ TC=25˚C @ TC=100˚C
Pulsed Drain Current, TP Limited by TJMAX
-...
