4N60I Description
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits.
4N60I Key Features
- Higher Current Rating -Lower RDS(on) -Lower Capacitances -Lower Total Gate Charge -Tighter VSD Specifications -Avalanche