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4N60I Datasheet N-channel MOSFET

Manufacturer: HAOHAI

Overview: 4A, 600V, N沟道功率场效应晶体管【产品参数规格书】 工业型号 FQU4N60 FQD4N60 公司型号 通俗命名 H H4N60I H4N60S 4N60 HAOHAI 封装 标识 N-Channel Power Field Effect Transistoe 英文与中文简体版本 无铅产品提供SGS环保认证, 符合欧美RoHS环保指令标准 TO-251 TO-252 IS 包装规格 TO-251管装 TO-252盘装 每管数量 每盒数量 80Pcs 4000Pcs 每卷2.

Datasheet Details

Part number 4N60I
Manufacturer HAOHAI
File Size 355.36 KB
Description N-Channel MOSFET
Datasheet 4N60I-HAOHAI.pdf

General Description

  This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.

  This new high energy device also offers a drain-to-source diode with fast recovery time.

  Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits.

Key Features

  • Higher Current Rating.
  • Lower RDS(on).
  • Lower Capacitances.
  • Lower Total Gate Charge.
  • Tighter VSD Specifications.
  • Avalanche Energy.

4N60I Distributor