4N60I
4N60I is N-Channel MOSFET manufactured by HAOHAI.
4A, 600V, N沟道功率场效应晶体管【产品参数规格书】
工业型号
FQU4N60 FQD4N60
公司型号 通俗命名
H4N60I H4N60S
4N60 HAOHAI
封装 标识
N-Channel Power Field Effect Transistoe 英文与中文简体版本 无铅产品提供SGS环保认证, 符合欧美RoHS环保指令标准
TO-251 TO-252
包装规格
TO-251管装 TO-252盘装
每管数量 每盒数量
80Pcs 4000Pcs 每卷2.5K 5000Pcs
每箱数量
40000Pcs 50000Pcs
Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits. Features
- Higher Current Rating
- Lower...
