4N60I Datasheet and Specifications PDF

The 4N60I is a Surface Mount N-Channel Power MOSFET.

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Part Number4N60I Datasheet
ManufacturerWEITRON
Overview The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara. 2 DRAIN * * RDS(ON) =2.5 Ohms @VGS Ultra low gate charge =10V * Low reverse transfer Capacitance 1 GATE * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness 3 SOURCE DRAIN CURRENT 4 AMPERES DRAIN SOURCE VOLTAGE 600 VOLTAGE D-PAK3/(TO-251) .
Part Number4N60I Datasheet
DescriptionN-Channel MOSFET
ManufacturerHAOHAI
Overview   This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.   This new high energy device also offers a drain-to-source diode with fast recov.
*Higher Current Rating
*Lower RDS(on)
*Lower Capacitances
*Lower Total Gate Charge
*Tighter VSD Specifications
*Avalanche Energy .