4N60F Overview
This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been especially designed to minimize on-state resistance, Have a high rugged avalanche characteristics.These devices are well suited for high efficiency switched mode power supplies, active power factor correction.electronic lamp ballasts based on half bridge topology. 4N60/4N60F VDSS RDS(ON) ID 600V 2.5Ω.
4N60F Key Features
- 4A, 600V, RDS(on) = 2.5Ω @VGS = 10 V
- Low gate charge ( typical 16nC)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
