4N60C Key Features
- 4.0A, 600V, RDS(on)typ. = 2.2Ω@VGS = 10 V
- Low gate charge ( typical 14nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Part: 4N60C
- Manufacturer: Maple Semiconductor
- Size: 299.91 KB
Other 4N60C Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
| ROUM ROUM |
4N60 | 4A 600V N-channel Enhancement Mode Power MOSFET |
| Zibo Seno Zibo Seno |
4N60 | Power MOSFET |
KIA |
4N60 | N-CHANNEL MOSFET |
Unisonic Technologies |
4N60 | N-CHANNEL POWER MOSFET |
Nell Power Semiconductor |
4N60 | N-Channel Power MOSFET |
4N60C Description
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge...