4N60C Overview
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge...
4N60C Key Features
- 4.0A, 600V, RDS(on)typ. = 2.2Ω@VGS = 10 V
- Low gate charge ( typical 14nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
