Nell Power Semiconductor 4N60F
4N60 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications.| Part No. | 4N60F |
|---|---|
| Datasheet | 4N60F Download |
| Manufacturer |  Nell Power Semiconductor |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The Nell threshold voltage of 4 volts.FEATURES
RDS(ON) = 2.5Ω@VGS = 10V Ultra low gate charge(20nC max.) Low reverse transfer capacitance (CRSS = 8pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D G DS TO-251 (I-PAK) (4N60F) D D G S TO-252 (D-PAK) (4N60G) GDS TO-220AB (4N60A) GDS TO-220F (4N60AF) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 4 600 2.5 @ VGS = 10V 20 D (Drain) G (Gate) S (Source) Page 1 of 10 SEMICONDUCTOR 4N60 Series RRooHHSS Nell High Power ProductsABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VDSS Drain to Source voltage TJ=25°C to 150°C VDGR Drain to Gate voltage RGS=20KΩ VGS ID IDM IAR EAR EAS dv/dt Gate to Source voltage Continous Drain Current Pulsed Drain current(Note 1) Avalanche current(Note 1) Repetitive avalanche energy(Note 1) Single pulse avalanche energy (Note 2) Peak diode recovery dv/dt(Note 3) TC=25°C TC...
