Description
The UTC 4N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
Features
- S.
- RDS(ON) < 2.5Ω @VGS = 10 V.
- Ultra Low Gate Charge ( typical 15 nC ).
- Low Reverse Transfer Capacitance ( CRSS = typical 8.0 pF ).
- Fast Switching Capability.
- Avalanche Energy Specified.
- Improved dv/dt Capability, high Ruggedness
11
TO-251
TO-220F
1 TO-220F1
1 TO-251S
1 TO-252.
- SYMBOL.
4N60Z Datasheet
