Description
The UTC 4N60-N is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
Features
- S.
- RDS(ON) ≤ 2.5 Ω @ VGS=10V, ID=2.2A.
- Fast Switching Capability.
- Avalanche Energy Specified.
- Improved dv/dt Capability, high RuggednessA
Power MOSFET.
- SYMBOL
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QW-R502-971.D
4N60-N
Power MOSFET.
4N60-N Datasheet
