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4N60-E

Manufacturer: Unisonic Technologies

4N60-E datasheet by Unisonic Technologies.

4N60-E datasheet preview

4N60-E Datasheet Details

Part number 4N60-E
Datasheet 4N60-E-UnisonicTechnologies.pdf
File Size 265.50 KB
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
4N60-E page 2 4N60-E page 3

4N60-E Overview

The UTC 4N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

4N60-E Key Features

  • RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A
  • Fast Switching Capability
  • Avalanche Energy Specified
  • Improved dv/dt Capability, high Ruggedness
  • SYMBOL
  • ORDERING INFORMATION
  • Tape Reel
  • Tape Reel
  • Tape Reel
  • MARKING

4N60-CB from other manufacturers

View 4N60-CB datasheet index

Brand Logo Part Number Description Other Manufacturers
UTC Logo 4N60-CB N-CHANNEL MOSFET UTC
UTC Logo 4N60-Q N-CHANNEL POWER MOSFET UTC
UTC Logo 4N60-TA5 600V N-CHANNEL POWER MOSFET UTC
ROUM 4N60 4A 600V N-channel Enhancement Mode Power MOSFET ROUM
Zibo Seno 4N60 Power MOSFET Zibo Seno
Unisonic Technologies logo - Manufacturer

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4N60-E Distributor

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