Description
The UTC 4N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
Features
- S.
- RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A.
- Fast Switching Capability.
- Avalanche Energy Specified.
- Improved dv/dt Capability, high Ruggedness.
- SYMBOL
Power MOSFET
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QW-R502-970.D
4N60-E
Power MOSFET.
4N60-E Datasheet
