Part 4N60-E
Description N-CHANNEL POWER MOSFET
Category MOSFET
Manufacturer Unisonic Technologies
Size 265.50 KB
Unisonic Technologies
4N60-E

Overview

The UTC 4N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

  • RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness
  • SYMBOL Power MOSFET Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 7