4N60 datasheet by Inchange Semiconductor.
| Part number | 4N60 |
|---|---|
| Datasheet | 4N60-INCHANGE.pdf |
| File Size | 229.22 KB |
| Manufacturer | Inchange Semiconductor |
| Description | N-Channel Mosfet Transistor |
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·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose power amplifier RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 4 A ID(puls) Pulse Drain Current 16 A Ptot...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| ROUM | 4N60 | 4A 600V N-channel Enhancement Mode Power MOSFET | ROUM |
| Zibo Seno | 4N60 | Power MOSFET | Zibo Seno |
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4N60 | N-CHANNEL MOSFET | KIA |
 |
4N60 | N-CHANNEL POWER MOSFET | UTC |
 |
4N60 | N-Channel Power MOSFET | nELL |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 4N60AS | N-Channel MOSFET |
