4N60
Description
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
Key Features
- Fast Switching
- ESD Improved Capability
- Low ON Resistance(Rdson≤2.5Ω)
- Low Gate Charge(Typical Data:14.5nC)
- Low Reverse Transfer Capacitances(Typical:4pF)
- 100% Single Pulse Avalanche Energy Test
- 100% ΔVDS Test
Representative 4N60 image (package may vary by manufacturer)
