Datasheet Details
| Part number | 4N60 |
|---|---|
| Manufacturer | ROUM |
| File Size | 1.28 MB |
| Description | 4A 600V N-channel Enhancement Mode Power MOSFET |
| Datasheet |
 4N60 Datasheet
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General Description
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
Which accords with the RoHS standard.
Key Features
- Fast Switching.
- ESD Improved Capability.
- Low ON Resistance(Rdson≤2.5Ω).
- Low Gate Charge(Typical Data:14.5nC).
- Low Reverse Transfer Capacitances(Typical:4pF).
- 100% Single Pulse Avalanche Energy Test.
- 100% ΔVDS Test TO-220C TO-220F TO-262 3.