4N600
Description
The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed. The TO-220 is offered in a 3-pin is universally preferred for all mercial-industrial applications at power dissipation level to approximately to 50 watts. Also, available in a D2 surface mount power package with a power dissipation up to 2 Watts
Features
- -
- Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser Super high density cell design for extremely low RDS(ON)
VDSS = 600V RDS (ON) = 1.9 Ω ID = 4.0A Ordering Information
Device
4N600T 4N600S
Package
TO-220 TO-263 ( D2 )
Temp.
0 to 150°C 0 to 150°C
Absolute Maximum Rating
Symbol
ID...
