The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Bay Linear
Inspire the Linear Power
N-Channel Field Effect Transistor
4N600(3600)
Description
The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed. The TO-220 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approximately to 50 watts. Also, available in a D2 surface mount power package with a power dissipation up to 2 Watts
Features
• • • Critical DC Electrical parameters specified at elevated Temp.