4N600 Description
The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed. The TO-220 is offered in a 3-pin is universally preferred for all mercial-industrial applications...
4N600 Key Features
- Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need