4N60G
DESCRIPTION
The Nell 4N60 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts.
They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications.
FEATURES
RDS(ON) = 2.5Ω@VGS = 10V Ultra low gate charge(20n C max.) Low reverse transfer capacitance (CRSS = 8p F typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature
G DS TO-251 (I-PAK) (4N60F) D
TO-252 (D-PAK) (4N60G)
TO-220AB (4N60A)
TO-220F (4N60AF)
PRODUCT SUMMARY
ID (A) VDSS (V) RDS(ON) (Ω) QG(n C) max.
4 600 2.5 @ VGS = 10V 20
D (Drain)
G (Gate)
S (Source)
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SEMICONDUCTOR
4N60 Series RRoo HHSS
Nell High Power Products
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise...
