• Part: 4N60
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: HAOHAI
  • Size: 501.22 KB
Download 4N60 Datasheet PDF
HAOHAI
4N60
Features  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge: 15n C(Typ.)  Extended Safe Operating Area  Lower RDS(ON): 2.0Ω(Typ.) @ VGS=10V  100% Avalanche Tested  Package: TO-220AB & TO-220F ID=4A BVDSS=600V RDS(on)=2.0Ω - 特点  导通电阻低、开关速度快、驱动简单、可并联使用、输入阻抗高、符合Ro HS规范 - 应用范围  开关电源、LCD电源、LED驱动电源、机箱电源、UPS电源、  各种充电器、电子整流器、电子变压器、逆变器、控制器、转换器、  风扇控制板、以及电源适配器、汽车稳压器等线性放大和功率开关电路 - 封装形式  TO-220P 或 TO-220AB(半塑封)  TO-220F 或 TO-220FP(全塑封) 4N60 Series Pin Assignment 3-Lead Plastic TO-220AB Package Code: P Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 2D Series Symbol: 1G 3S - Absolute Maximum Ratings(TC=25℃ unless otherwise specified) Symbol Parameter VDSS IDM VGS EAS IAR EAR Drain-Source Voltage Drain Current-Continuous (TC=25℃) Drain Curren-Continuous (TC=100℃) Drain Current -...
4N60 reference image

Representative 4N60 image (package may vary by manufacturer)