• Part: 4N60B
  • Description: N-Chanel Power MOSFET
  • Category: MOSFET
  • Manufacturer: angstrem
  • Size: 1.02 MB
Download 4N60B Datasheet PDF
angstrem
4N60B
Features Low Qg Low Rdson Ro HS pliant 1 Gate 2 Drain 3 Source Table 1. Device summary Part numbers ANA4N60B ANP4N60B ANB4N60B AND4N60B ANI4N60B ANU4N60B Marking A4N60B P4N60B B4N60B D4N60B I4N60B U4N60B Package TO-220FP TO-220 D²PAK DPAK I PAK IPAK Value TO-220FP TO-220 D²PAK I2PAK DPAK IPAK Packaging Tube Tube Tape and reel Tape and reel Tube Tube Units Table 2. Absolute Maximum Ratings Symbol ID ID IDM(1) VGS PD Parameter Drain current (continuous), VGS= at TC = 25°C Drain current (continuous), VGS= at TC = 100°C Drain current (pulsed) at TC = 25°C Gate-source voltage Maximum Power Dissipation at TC = 25°C Maximum Power Dissipation at TC = 100°C Storage temperature Operating junction temperature Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw 4 2,5 16 ±20 25 ― -55 … +150 -55 … +150 260 1,13 Value TO-220FP TO-220 D²PAK I PAK Tstg Tj TL °C ― N- m Value DPAK IPAK Table 3. Thermal resistance Symbol Rthj-case Rthj-amb Parameter Thermal...