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4N60S - N-Channel MOSFET

Download the 4N60S datasheet PDF. This datasheet also covers the 4N60I variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

　　This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.

　　This new high energy device also offers a drain-to-source diode with fast recovery time.

Key Features

  • Higher Current Rating.
  • Lower RDS(on).
  • Lower Capacitances.
  • Lower Total Gate Charge.
  • Tighter VSD Specifications.
  • Avalanche Energy.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (4N60I-HAOHAI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 4N60S
Manufacturer HAOHAI
File Size 355.36 KB
Description N-Channel MOSFET
Datasheet download datasheet 4N60S Datasheet

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Other Datasheets by HAOHAI

Part Number Description
4N60 N-Channel MOSFET
4N60I N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
4A, 600V, N【】 FQU4N60 FQD4N60 H H4N60I H4N60S 4N60 HAOHAI N-Channel Power Field Effect Transistoe　 SGS, RoHS TO-251 TO-252 IS TO-251 TO-252 80Pcs 4000Pcs 2.5K 5000Pcs 40000Pcs 50000Pcs 　　Description 　　This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. 　　This new high energy device also offers a drain-to-source diode with fast recovery time. 　　Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits.